Sr

H;S ¼ R H R H;S ðÞE R H R H;S ðÞ0 , where R H R H;S ðÞE and R H R H;S ðÞ0 are the normalized Hall resistance with and without electric field, > > 0 >.

Sr. V s _ ¼ r Ñ Î Ç Í ½ â Û s § È » Í v s Ô v Í ½ _ ¹ n W Ï s ;. S ¼ r s X s ð5Þ Eq (1) indicates the completion time of job j in job p(j) at stage i The term presents the time epoch when machine at stage i is ready forprocessingjob j;. S ¼ R n2 ¼ D 11 n2;.

S ¼ r s r ð u a wÞ¼ S eðu a u wÞ (2) where is the volumetric water content, r is the residual volumetric water content, s is the saturated volumetric water content, S e is the effective degree of saturation, and u w is pore water pressure Lu and Likos 04 and Lu et al 10 show that suction stress can be written solely as functions of the effective degree of saturation or matric. GÎg°U 0þ W& ÕU 0þ 5Á%þ ` U gæ P2 #ÊOPFkYv 🗸 🗸 🗸 #Ö\(!4 P2 #ÊOPFk. FÆgug gm/²fÇ h x Íh 7µ5 >Ü>Ú>Ü h b¹ h fþ ì6ëfþ7µ5 føfþ 'ì Íh !.

S ¼ R r P~ð~rÞ~s R R R P~ð~rÞ~s;. }~@A 5t'Á1,1g¹Ã^_U > #1;¹Oz Læ ËW I æZLæ5L )c`a?)cd >)cLæ1>@® ËW I ~¾ >ËW F. K T ¼ ds dH ¼ d2x dH2, (7) which means that the amount the moment arm changes with joint position is the endpoint stiffness This provides a basis.

Fast response–recovery time toward acetone by a sensor prepared with Pd doped WO3 nanosheets† Ke He,‡a Zhao Jin,‡a Xiangfeng Chu,b Wenjie Bi,a Wu Wang,a Chao Wanga and Shantang Liu *a PdWO 3 nanosheets were synthesized through a onestep hydrothermal method using Na 2PdCl 4 solution as the palladium source and sodium tungstate as the tungsten source,. S ¼ ri LAI active ð3Þ where ri is the bulk stomatal resistance of the wellilluminated leaf, and LAI active is the active leaf area index (here, we use half of the improved LAI to represent), which reflects the ratio of sunlit leaf area to the soil surface For other parameters, we use Eqs (4 )–(7) r a ¼ 8 u 2 ð4Þ where u 2 is the wind speed at height of 2 m The atmospheric. An advanced model of the roundwheel compound bow M Tiermas Received 13 April 15/Accepted 7 August 15/Published online August 15 The Author(s) 15.

Effects of spatial smoothing on fMRI group inferences Michal Mikla,b,⁎, Radek Marečekb, Petr Hluštíkc,d, Martina Pavlicováe, Aleš Drasticha, Pavel Chlebusb, Milan Brázdilb, Petr Krupaf aDepartment of Biomedical Engineering, FEEC, Brno University of Technology, Koleni 4, 612 00 Brno, Czech Republic bFirst Department of Neurology, St Anne’s University Hospital and. Markov Decision Process •A Markov decision process is a tuple (S, A, {Psa}, γ, R) •Sis the set of states •Eg, location in a maze, or current screen in an Atari game. (6) where the denominator is the total power radiated by the feed, and the numerator is the portion of the power incident on the array aperture TABLE 1 Important Geometric Quantities in a Reflectarray System Quantity Formula Feed location F(0, H tan h 0, H Feed beam point (FBP) P 0(x, y 0,0) Element location P(x, y, 0) Position vector from feed.

S^ ¼ R d2 When using standard deviations a recommended estimate of process standard deviation, discussed in Chapter 5, is ^s ¼ sPooled c4 For charts based on ranges For charts based on standard deviations Sample size Hartley’s constant c4 constant Xbar chart limits R chart limits Xbar chart limits S chart limits nd2 c4 D3 D4 A3 B4 486 APPENDIX 2 Title untitled Created. C S2 ¼ C p ð9Þ R = D11 Cp Generator v = m∗a C =1/K11 L = M11 n1 – Figure 3 The equivalent circuit for the first mode piezoelectric generator iS Z (a) (b) S vS ZS Figure 4 The simplified generator model (a) Norton equivalent, (b) The´venin equivalent CS2 RS CS1 LS Figure 5. K is the concentration coefficient of the abutment stress Ground pressure consists of gravity stress and tectonic stress r s1 ¼ cH þ kcH ¼ð1 þ kÞcH ð6Þ Abutment stress is expressed as r s2 ¼ðk 1ÞcH.

O l u h b ¢ s ¼ r / d Ú E y Û ð y Y Ú E i v d ¢ s y s & { Ü Î ® v d ^ s ê & s d } ¤ ° ¥ J Ü ^ y H y 2 Ç s u Ú E z ¢ s r / d d q y Ú E s b h y Ú E y 8 W ¶ Ú v » Ê ¢ I ` j y A Õ & I ç v y y ò u O } ¤ ¥. In other cases, S_ quantifies the irreversibility of the dynamics The second. Journal of CrystalGrowth 250 (03)499–515 Induction time in crystallization of gas hydrates Dimo Kashchieva, Abbas Firoozabadib,* aInstitute of Physical Chemistry, Bulgarian Academy of Sciences, ul Acad G Bonchev 11, Sofia 1113, Bulgaria bReservoir Engineering Research Institute, 385 Sherman Avenue, Suite 2B, Palo Alto, CA , USA Received 4 November02;accepted11.

S ¼ R P electricalðÞT s ∞ 0 incidentðÞE;Ts dE ð1Þ where, P electrical is the electrical power generated by the thermophotovoltaic cell, and P incident is the total optical power incident on the cell P absorbed is the power absorbed by the cell and E is the photon energy R(E) is the spectrallyresolved reflectivity of the thermophotovoltaic cell Calibrating the thermophotovoltaic. And S ¼ Rn k 3 Zk (that is, the first n k variables are continuous, and the last k variables are integers) This is a fairly general setting, accommodating both continuous and discrete variables as well as inequality constraints involving smooth functions At two extremes, P reduces to a standard smooth nonlinear programming (NLP) model when k¼0, and to a standard mixedinteger linear. Lm, Lr, and Ls represent mutual, rotor, and stator inductance;.

19, S_ ¼ R vμD−1 μν vνPðxÞdx (we set the Boltzmann constant k B ¼ 1 throughout) In the case of thermal systems satisfying the Einstein relation, S_ corresponds to the rate at which the system dissipates heat into the bath, divided by the temperature;. " W& ÕU 0þ5¾4n2h4{8@X{ !. 4 ¿ ­ 4 ¿ ­ £ £ £ ­ ­ ­ ­ ­ £ ­ ® ® £ £ ° ­ £ £ £.

S ¼ R1 1 dmIþðL;mÞ=I s versus r pNL ¼ g 0L, for two line broadening mechanisms and three values of the solid angle The numerical results, lead us to introduce a general formula for the entire domain of ASE intensity and for both homogeneous and inhomogeneous line broadening This relation is written as follows, IðzÞ=I s ¼ / 2 ln 1þc X. S ¼ R 0ð1 aÞ Figure52c shows the response of both circuits for Ø= a 1=3, R 1 ¼ R 2 ¼ R L ¼ R 0, and V CC ¼ 10V If this signal is to be captured with a data acquisition system that has a dynamic range of 0 V to 10 V, the maximum gain that can be applied to the voltage divider is only 5/3 Although the Wheatstone bridge has the same initial sensitivity (slope), removal of the baseline. V s ¼ Rf if þ dΨf dt ± ωf Ψf Ψf ¼ Lf if þ Lm if þ ia Ψf m ¼ Lm > if þ ia 9 >> >> = >> >;.

flux ratio Rs ¼ RF=Ks. Vs ¼ R2 R1 þ R2 Determine the range of possible values of the gain when R 1 is the resistance of a 100V, 2 percent resistor and R 2 is the resistance of a 400V, 5 percent resistor Express the gain in terms of a nominal gain and a gain tolerance R2 R1 v o s – i – Figure P 249 P 2410 The voltage source shown in Figure P 2410 is an adjustable dc voltage source In other words. S ¼ r b =r u is the density ratio between the burned and unburned mixtures The normalized form of Eq (1) is written as S b=S0 b ¼ 1 Ma 0Ka (2) where Ka ¼ Kd0=S 0 u is the Karlovitz number and Ma 0 ¼ sL b=d is the Markstein number The laminar flame thickness d0 is defined as d0 ¼ðT ad T uÞ=ðdT=dxÞ max based on the temperature profile of the planar flame structure 16 The.

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Using information criteria to select the correct variance–covariance structure for longitudinal data in ecology Adrian G Barnett1*, Nicola Koper2, Annette J Dobson3, Fiona Schmiegelow4 and Micheline Manseau2 1Institute of Health and Biomedical Innovation & School of Public Health, Queensland University of Technology, 60 Musk Avenue, Kelvin Grove, Qld 4059, Australia;. And the termA i,f,t denotesthe timeepoch when job j is ready to be processed at stage i Eq (2) indicates the slack time of job p(j) at stage M Eq (3) indicates the. ³ ­ é Ê Ï.

S ¼ r s1 þ r s2 ¼ðk þ kÞcH ð5 Þ where, c is the volume weight of the overlying strata;. E s ¼ r r 273±009 ð1Þ s T s Ts ¼ r r s 1±005 ð2Þ s C E s ¼ r r (negative stress) and tension (positive stress), as shown in fig S3 There301±001 ð3Þ Compared to previous experiments on3D graphene assembly (the socalledgrapheneaerogel)intheliterat ure,ourresultsshowanoverallagree. S ¼ R L K (1) P OUT ¼ K V2 DD R PA (2) As shown in (2), the output power is K times higher than one PA using an ideal 11 transformer Thus, this concept is one efficient powercombining method for a CMOS PA with a wattlevel output power However, a shortcoming of this architecture is the low passive efficiency of each transformer Actually, the maximum available gain (MAG) of the.

L g is the geometric inductance per unit length of the resonator;. S ¼ R d=E d %10 ð2152 Þ The manner by which the above equations are applied is determined by the Design Approach (DA) of Eurocode 7 (EC7) The Design Approach adopted by each European country can be found in Bond and Harris ( 08) The recommended (EN ) values for partial factors for each of the three Design Approaches are given in Table 2151 As shown, both. H is the thickness of the overlying strata;.

Ó ä 3 H v É s K Ù Å Í ½ Ù n ü s * k ¿ ® Í ½ r s s ¶ Ä Í Í ÿ. Vs and is are. Breakdown of Fourier’s Law in Nanotube Thermal Conductors CW Chang,1,2,* D Okawa,1 H Garcia,1 A Majumdar,2,3,4 and A Zettl1,2,4, 1Department of Physics, University of California at Berkeley, California 947, USA 2Center of Integrated Nanomechanical Systems, University of California at Berkeley, California 947, USA 3Departments of Mechanical Engineering and.

ORIGINAL PAPER PRODUCTION ENGINEERING Modeling fracturing pressure parameters in predicting injector performance and permeability damage in subsea well completion. 2( qfúfç y  y Âh 0°3ufÒg h h '5 h y Âh 0°3ufúfçh. ¶ \ 3 S 3 3 S ' \ S Z å \ Q å S ¼ r \ S \ 3 S ven y ther wher y epresentativ f y IT IS EVERYBODY’S RESPONSIBILITY TO • U • omplianc w egula y • Tak f w y way • Av ompr tegrity v • A your t M se ex for other employ ar oft r for f very xpect necessary omplianc o y esol our employ xpr y onc egar omplianc RESOLVING DIFFICULT ISSUES 3 Q Z ¼ \ Qå ¼ &å å S.

S ¼ R max a s þb s n N where R s was the total incoming radiation during the day, R max was the theoretical incoming radiation on a clear day, a s and b s were empirical constants 025 and 05, respectively, as the United Nations Food and Agriculture Organization’s, n was the number of daily sunshine hours from the local weather station, and N was the greatest number of hours of. (1) where R s þiL k is the complex surface impedance of the superconductor, with kinetic inductance per unit length L k;. S ¼ r 2 r 1 1 þ L g L k;.

S ¼ R r wW s g maxW s (W s þ k 1) and O s ¼ R a P s þ k 2 P s þk 2W 0 (12) For the parameter values given in table 1, these two steady states meet in a transcritical bifurcation at R ¼ 1mmd21 For R 1, the vegetated steady state is stable to homogeneous perturbations, whereas the desert steady state is unstable For R , 1, the desert. E ´ ¾ !. Condition EC ∼ℏ=τ agrees with the condition Rs ¼ Rq, where the DQPT was predicted 2,3 (the dashed line in Fig 1) Here, Rq ¼ h=4e2 is the quantum resistance The existence of the DQPThas been supportedby experimental work 4–9, and possible applications for qubits have been discussed 10 The Hamiltonian of the JJ is specified by two conjugate variables, the phase φ.

º ¥ ß ¼ Ý « ¤ $U b s8j _ ~ p ° @ ö a K S/Õ 7d* b$Ù l ~ Ç w \ º5 1" º ¥ ß ¼ Ý « ¤ $U b s8j _ ~ p. ARTICLE A mapping framework of competition cooperation QTLs that drive community dynamics Libo Jiang 1, Xiaoqing He 1, Yi Jin 1, Meixia Ye 1, Mengmeng. ð2Þ where Vs and Vr are the fieldand armature voltages of EM, Rf and Lf.

Title Microsoft PowerPoint ç ¥ã ã ³å ã ã ·ã ³ã 㠸㠦ã è³ æ Author soudan Created Date 5/3/ PM. C S1 ¼ n 2C ¼ n2 K 11;. The Regional Impact of Urban Heat Mitigation Strategies on Planetary Boundary Layer Dynamics Over a Semiarid City Jiyun Song1,2,3, ZhiHua Wang1, and Chenghao Wang1 1Arizona State University, School of Sustainable Engineering and the Built Environment, Tempe, AZ, USA, 2University of Cambridge, Department of Applied Mathematics and Theoretical Physics, Centre.

ð1Þ V r ¼ Ra ia þ dΨa dt ± ωf − ωe Ψa ψ a¼ L i þ Lm if þ i Ψam ¼ Lm Applying if þ ia 9 >> >> = >> >>;. Markov Decision Process •A Markov decision process is a tuple (S, A, {Psa}, γ, R) •Sis the set of states •Eg, location in a maze, or current screen in an Atari game. ^ ý 6 ð è ½ s ¼ r 0 ¯ s ?.

¶ \ 3 S 3 3 S ' \ S Z å \ Q å S ¼ r \ S \ 3 S ven y ther wher y epresentativ f Gal Cy IT IS EVERYBODY’S RESPONSIBILITY TO • U C • C Z P omplianc w egula Cy C • Tak f w C y way • Av ompr tegrity v • A your t M se ex for other employ ar oft r for f Every xpect necessary omplianc C o y esol C our employ xpr y onc egar omplianc C RESOLVING DIFFICULT ISSUES 3 Q Z ¼ \ Q. )6ð5/7 @¡ 3 1 3 1 2 36ï 3 55ÌQÚ 3 1 3 2 26ï 75Ì * !. K is the horizontal stress coefficient;.